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 Structural and photoluminescence properties of ZnO nanoparticles on silicon oxide
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6078

title: Structural and photoluminescence properties of ZnO nanoparticles on silicon oxide
authors: Giannakopoulos, K.
Boukos, N.
Travlos, A.
Monteiro, T.
Soares, M.J.
Peres, M.
Neves, A.
Carmo, M.C.
keywords: Self assembled ZnO nanoparticles
Optical properties
EELS
issue date: Jan-2007
publisher: Springer-Verlag
abstract: Isolated, self assembled ZnO nanoparticles are grown in two steps: by the electron beam evaporation of Zn on oxidised silicon wafers, during which isolated Zn nanodots are grown, and a subsequent annealing in oxygen that results in the desired ZnO nanodots. Low temperature PL measurements of the ZnO nanodots show that the near band edge part of the spectra is dominated by a zero phonon line near 3.36 eV which is an overlap of two emitting lines near 3.363 eV and 3.367 eV. Characterization by TEM and EELS shows that the nanoparticles are zinc oxide single crystals grown with their c-axis perpendicular to the substrate; their distribution, size and crystallinity depend on the deposition parameters of zinc and the growth substrate. We discuss the effect of these parameters on the morphology of the resulting material. Our approach demonstrates a simple method for the growth of high purity isolated ZnO nanodots of similar sizes, distributed uniformly on a large surface.
URI: http://hdl.handle.net/10773/6078
ISSN: 0947-8396
publisher version/DOI: dx.doi.org/10.1007/s00339-007-3957-1
source: Applied Physics A: Materials Science and Processing
appears in collectionsFIS - Artigos
I3N - Artigos

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