DSpace
 
  Repositório Institucional da Universidade de Aveiro > Departamento de Química > DQ - Artigos >
 The LP-MOCVD of CdS/Bi2S3 bilayers using single-molecule precursors
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6033

title: The LP-MOCVD of CdS/Bi2S3 bilayers using single-molecule precursors
authors: Monteiro, OC
Trindade, T
Park, JH
O'Brien, P
keywords: Chemical vapour deposition
Semiconductors
Molecular precursors
Solar energy materials
issue date: Jan-2004
publisher: Elsevier
abstract: The single-molecule precursors [Cd(S2CNMe n-Hex)2] and [Bi(S2CNMe n-Hex)3] (Me = methyl; n-Hex = n-hexyl) were used to prepare CdS/Bi2S3 layers by low-pressure metal organic chemical vapour deposition (LP-MOCVD). The bilayers were deposited onto glass substrates at 400–450 jC for varying growth conditions. The materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and optical measurements. The results were compared with those obtained for the single phases.
URI: http://hdl.handle.net/10773/6033
ISSN: 0167-577X
source: Materials Letters
appears in collectionsDQ - Artigos

files in this item

file description sizeformat
Materials Letters, 58 (2004) 119-122.pdf287.84 kBAdobe PDFview/open
Restrict Access. You can Request a copy!
statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! RCAAP OpenAIRE DeGóis
ria-repositorio@ua.pt - Copyright ©   Universidade de Aveiro - RIA Statistics - Powered by MIT's DSpace software, Version 1.6.2