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|title: ||The use of bismuth(III) dithiocarbamato complexes as precursors for the low-pressure MOCVD of Bi2S3|
|authors: ||Monteiro, Olinda C.|
Park, Jin H.
|keywords: ||Bismuth sulfide|
|issue date: ||Oct-2000|
|publisher: ||Wiley-VCH Verlag Berlin|
|abstract: ||Communication: The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrayshas attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)3 and Bi(S2CNMe-nHex)3 produces strongly adhered polycrystalline films on glass substrates at 400–450 °C. XPS and EDX analyses confirm that the deposited film surface is predominantly Bi2S3 and no elemental contamination is detected.|
|source: ||Chemical Vapor Depositiont|
|appears in collections||DQ - Artigos|
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