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 The use of bismuth(III) dithiocarbamato complexes as precursors for the low-pressure MOCVD of Bi2S3
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/5950

title: The use of bismuth(III) dithiocarbamato complexes as precursors for the low-pressure MOCVD of Bi2S3
authors: Monteiro, Olinda C.
Trindade, Tito
Park, Jin H.
O'Brien, Paul
keywords: Bismuth sulfide
Carbamates
Dithio
MOCVD
Low pressure
Single-source precursors
issue date: Oct-2000
publisher: Wiley-VCH Verlag Berlin
abstract: Communication: The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrayshas attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)3 and Bi(S2CNMe-nHex)3 produces strongly adhered polycrystalline films on glass substrates at 400–450 °C. XPS and EDX analyses confirm that the deposited film surface is predominantly Bi2S3 and no elemental contamination is detected.
URI: http://hdl.handle.net/10773/5950
ISSN: 0948-1907
source: Chemical Vapor Depositiont
appears in collectionsDQ - Artigos

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