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|title: ||Precursor chemistry: remaining challenges and some novel approaches|
|authors: ||O' Brien, P.|
Malik, M. A.
Walsh, J. R.
Jones, A. C.
|issue date: ||Jan-1997|
|abstract: ||In this short paper an outline of the properties of an ideal precursor for MOCVD is given. Two systems are then used to
explain the advantages of novel precursor systems over conventional ones, for the deposition of electrically important
materials. The first example concerns the use of the triethylamine adduct of dimethylzinc as a precursor either in the
deposition of II/VI materials containing zinc or the doping of III/V materials. The second example concerns the
development of thiocarbamato precursors of improved volatility and their use in the deposition of PbS a material whose
deposition by MOCVD has been problematic.|
|source: ||Journal of Crystal Growth|
|appears in collections||DQ - Artigos|
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