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 Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1-xN (0≤x≤1) alloys
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/5633

title: Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1-xN (0≤x≤1) alloys
authors: Peres, Marco
Magalhães, Sérgio
Franco, N.
Soares, Manuel
Neves, Armando
Alves, E.
Lorenz, K.
Monteiro, Teresa
keywords: AlGaN
Rare earth doping
issue date: Feb-2009
publisher: Elsevier
abstract: The effects of the AlN molar fraction on structural and optical properties of praseodymium implanted AlxGa1−xN (0⩽x⩽1) layers were investigated. Using photoluminescence and excitation luminescence techniques we are able to observe the intra-4f23P1→3H5 (526 nm) and 3P0→3F2 (652 nm) transitions of the Pr3+ ion. The red emission peak position shifts to lower energies with increasing Al content in the alloys. The peak full-width at half-maximum increases with the Al content up to x=0.7 due to disorder effects. The implantation damage and Pr-incorporation was investigated by Rutherford backscattering spectrometry doing channelling measurements along the 〈0 0 0 1〉 direction. X-ray diffraction reciprocal space maps show an expansion of the c lattice parameter in the implanted region which is reversed after thermal annealing at 1300 °C.
description: Partilhar documento na coleção da comunidade Laboratório Associado I3N
URI: http://hdl.handle.net/10773/5633
ISSN: 0026-2692
publisher version/DOI: http://dx.doi.org/10.1016/j.mejo.2008.07.032
source: Microelectronics Journal
appears in collectionsFIS - Artigos

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