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 Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/5630

title: Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions
authors: Monteiro, T.
Neves, A. J.
Soares, M. J.
Carmo, M. C.
Peres, M.
Alves, E.
Rita, E.
keywords: Zinc compounds
Thulium
II-VI semiconductors
iion implantation
Optical frequency conversion
Ultraviolet spectra
Visible spectra
Photoluminescence
Energy gap
issue date: Nov-2005
publisher: American Institute of Physics
abstract: We report on the up-converted ultraviolet near-band edge emission of bulk ZnO generated by visible and ultraviolet photons with energies below the band gap. This up-converted photoluminescence was observed in samples intentionally doped with Tm ions, suggesting that the energy levels introduced by the rare earth ion in the ZnO band gap are responsible for this process.
URI: http://hdl.handle.net/10773/5630
ISSN: 0003-6951
publisher version/DOI: http://link.aip.org/link/doi/10.1063/1.2128491
source: Applied Physics Letters
appears in collectionsFIS - Artigos

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