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 High temperature annealing of Europium implanted AlN
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/5556

title: High temperature annealing of Europium implanted AlN
authors: Lorenz, K.
Magalhães, Sérgio
Alves, E.
Peres, Marco
Monteiro, Teresa
Neves, Armando
Boćkowski, M.
keywords: Aluminium Nitride
Implantation
Photoluminescence
Rare Earth
Rutherford Backscattering Spectrometry
issue date: 2010
publisher: Elsevier
abstract: AlN was implanted with 300 keV Eu ions within a wide fluence range from 4 × 1014 to 1.4 × 1017 at/cm2. The damage build-up was investigated by Rutherford Backscattering/Channelling. Sigmoidal shaped damage build-up curves indicate efficient dynamic annealing. A regime with low damage increase for fluences below 1015 at/cm 2 is followed by a strong increase for intermediate fluences. For the highest fluences the damage curve rises slowly until a buried amorphous layer is formed. High temperature annealing was performed in nitrogen atmospheres at low pressure (1300 °C, 105 Pa) or at ultra-high pressure (1450 °C, 109 Pa). Implantation damage was found to be extremely stable and annealing only resulted in slight structural recovery. For high fluences out-diffusion of Eu is observed during annealing. Nevertheless, photoluminescence (PL) measurements show intense Eu-related red light emission for all samples with higher PL intensity for the high temperature high pressure annealing
description: Partilhar documento na coleção da comunidade Laboratório Associado I3N
URI: http://hdl.handle.net/10773/5556
ISSN: 0168-583X
source: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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