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 Lattice site location and optical activity of Er implanted ZnO
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/5550

title: Lattice site location and optical activity of Er implanted ZnO
authors: Alves, E.
Rita, E.
Wahl, U.
Correia, J.G.
Monteiro, Teresa
Soares, Manuel
Boemare, Claude
keywords: Er doping
ZnO crystals
issue date: 2003
publisher: Elsevier
abstract: ZnO (O face) single crystals were implanted with 150 keV Er+ ions to fluences of 5 × 1014 and 5 × 1015 Er+/cm2 at room temperature. For fluences of 5 × 1015 Er+/cm2 the implantation damage raises the minimum yield from 2% to 22%. Despite the large amount of damage a fraction of 90% of the implanted Er ions are incorporated in substitutional sites along the [0 0 0 1] axis. Photoluminescence (PL) studies reveal the presence of a weak emission near 1.54 μm at 77 K due to the 4I13/2→4I15/2 transition of the Er3+ ions. Annealing in oxidizing atmosphere at 800 °C leads to a reduction of the implantation damage, which is fully recovered after annealing at 1050 °C for 30 min. The annealing at 1050 °C leads to the outdiffusion of Er, with a 50% loss from the implanted region after the annealing. Only a fraction of 25% of the remaining Er is still in regular sites after the annealing and the Er3+ PL vanishes
URI: http://hdl.handle.net/10773/5550
ISSN: 0168-583X
source: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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