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 AIN content influence on the properties of Al x Ga1- x N doped with Pr ions
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/5520

title: AIN content influence on the properties of Al x Ga1- x N doped with Pr ions
authors: Fialho, M.
Magalhães, Sérgio
Alves, L.C.
Marques, C.
Maalej, R.
Monteiro, Teresa
Lorenz, K.
Alves, E.
keywords: AlGaN
Rare earth implantation
Rutherford backscattering/channeling
X-ray diffraction
issue date: 2012
publisher: Elsevier
abstract: The purpose of this work is the study of the structural and optical properties of Alx Ga1- x N films grown on (0 0 0 1) sapphire substrates with different AlN molar fraction implanted with 150 keV of praseodymium ions with a fluence of 2.5 × 1014 cm-2. The main goal is to achieve the optical doping of Alx Ga1- x N with the rare earth Pr. Structural properties, damage accumulation and Pr lattice site location were studied combining Rutherford backscattering/channeling spectrometry and high resolution X-ray diffraction. The channeling data clearly indicate a higher resistance of the lattice to irradiation damage with the increase of the AlN content. Detailed angular scans reveal a fraction above 90% of Pr incorporated in near substitutional sites. A pronounced narrowing at the bottom of the Pr angular curve along the c-axis suggests the presence of a minor fraction with a higher displacement towards the center of the channel. The displacement is less pronounced with the increase of Ga content in the samples. Ionoluminescence with a 1H+ microbeam reveal an enhancement of the optical activity when the AlN content is in the intermediate range of concentrations
URI: http://hdl.handle.net/10773/5520
ISSN: 0168-583X
source: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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