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 Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/5512

title: Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses
authors: Niehus, M.
Sanguino, P.
Schwarz, R.
Fedorov, A.
Martinho, J.M.G.
Soares, Manuel
Monteiro, Teresa
Wünsch, F.
Kunst, M.
keywords: Atomic force microscopy
Carrier concentration
Electron traps
Epitaxial growth
Laser pulses
Light emitting diodes
Photoluminescence
Photomultipliers
Polycrystalline materials
Probability
Pulsed laser deposition
Sapphire
Scanning electron microscopy
Thin films
Transport properties
X ray photoelectron spectroscopy
Stready-state photoluminescence
Thermal mismatch
Time-resolved photoluminescence (TRPL)
Transient photocurrents
Gallium nitride
issue date: 2004
publisher: Elsevier
abstract: We have applied short laser pulses with a minimal pulse width of 5 ps to study the non-radiative and radiative carrier density decay in polycrystalline GaN. The GaN films are deposited by a cyclic pulsed laser deposition (PLD) technique at a relatively low substrate temperature of 600 °C on sapphire substrates. Results from photoluminescence decay and transient photocurrents are compared with respect to trapping, recombination, and transport of photogenerated carriers in polycrystalline GaN thin films. © 2004 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/10773/5512
ISSN: 0022-3093
source: Journal of Non-Crystalline Solids
appears in collectionsFIS - Artigos

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