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 Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/5511

title: Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN
authors: Sanguino, P.
Niehus, M.
Melo, L.
Schwarz, R.
Fedorov, A.
Martinho, J.M.G.
Soares, Manuel
Monteiro, Teresa
keywords: PLD of GaN
ps-Fluorescence decay
Transient photoconductivity
Atomic force microscopy
Dye lasers
Grain boundaries
Polycrystalline materials
Pulsed laser deposition
Thin films
X ray analysis
X ray diffraction analysis
Multiphonon emission
Transient photoconductivity
Gallium nitride
issue date: 2003
publisher: Elsevier
abstract: In this work we focus on the study of the fast photoluminescence decay in the ps time regime in comparison with structural properties of GaN films deposited by a cyclic pulsed laser deposition technique. Structural film properties are obtained from X-ray analysis and atomic force microscopy. Steady-state photoluminescence performed at 13 K shows the typical donor-bound excitonic transition (D0X) at 3.47 eV and a line near 3.42 eV which can be related to structural defects. Fast fluorescence decays were obtained after excitation at 287 nm (4.32 eV) with 5ps pulses from a frequency-doubled cavity-dumped dye laser. At room temperature the decay of the blue fluorescence at 367 nm showed decay times between 4 and 40 ps, whereas the yellow contribution at 530 nm could best be described by a multi-exponential fit with decay times of several ns. The results are compatible with published exciton decay times in epitaxial MOCVD-grown GaN films. © 2003 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/10773/5511
ISSN: 0921-4526
source: Physica B: Condensed Matter
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