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http://hdl.handle.net/10773/21052| Title: | Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping |
| Author: | Kachkanov, Vyacheslav Dolbnya, Igor O'Donnell, Kevin Lorenz, Katharina Pereira, Sergio Watson, Ian Sadler, Thomas Li, Haoning Zubialevich, Vitaly Parbrook, Peter |
| Keywords: | ALUMINUM NITRIDE DIFFRACTION GAN |
| Issue Date: | 2013 |
| Publisher: | WILEY-V C H VERLAG GMBH |
| Abstract: | X-ray Reciprocal Space Mapping (RSM) is a powerful tool to explore the structure of semiconductor materials. However, conventional lab-based RSMs are usually measured in two dimensions (2D) ignoring the third dimension of diffraction-space volume. We report the use of a combination of X-ray microfocusing and state-of-the-art 2D area detectors to study the full volume of diffraction-space while probing III-nitride materials on the microscale. (C) 2012 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/21052 |
| DOI: | 10.1002/pssc.201200596 |
| ISSN: | 1862-6351 |
| Publisher Version: | 10.1002/pssc.201200596 |
| Appears in Collections: | CICECO - Artigos |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping_10.1002pssc.201200596.pdf | 1.53 MB | Adobe PDF |  |
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