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|title: ||Diamond/ SiC heterojunctions|
|authors: ||Mukherjee, Debarati|
Mendes, Joana C.
Alves, Luis N.
Oliveira, Filipe J.
|issue date: ||2016|
|abstract: ||Diamond and SiC are wide bandgap (WBG)
materials which can be used to fabricate high power devices with
improved performance. The combination of these materials into
one single device is expected to bring some benefits, like a better
thermal management with a corresponding increase in the
operating power. Diamond films deposited by Chemical Vapor
Deposition (CVD) can be doped with boron, making them p-type
semiconductors. Diamond films deposited on foreign substrates
are intrinsically polycrystalline, so the quality of the interface,
determined by deposition conditions and seeding method, plays a
critical role in the heterojunction characteristics, impacting both
reverse current and breakdown voltage. This work reports the
fabrication and characterization of p-diamond / n-SiC heterojunctions.
P-type polycrystalline diamond (PCD) films were
deposited directly on the surface on n-type SiC commercial
wafers by Hot Filament CVD (HFCVD) using different seeding
techniques. I-V characteristics of the obtained heterojunctions
were measured at room temperature and the quality and
morphology of the diamond films were assessed by scanning
electronic microscopy (SEM) and Raman spectroscopy. The
influence of the different seeding techniques on the I-V
characteristics is discussed.|
|publisher version/DOI: ||http://doi.org/10.1109/PRIME.2016.7519492|
|source: ||PRIME 2016: 12th Conference on Ph.D. Research in Microelectronics and Electronics|
|appears in collections||CICECO - Comunicações|
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