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|title: ||2.2 eV luminescence in GaN|
|authors: ||Hofmann, D. M.|
Meyer, B. K.
Mokov, E. N.
|keywords: ||Crystal defects|
Metallorganic vapor phase epitaxy
|issue date: ||1996|
|publisher: ||Materials Research Society|
|abstract: ||The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.|
|publisher version/DOI: ||http://dx.doi.org/10.1557/PROC-395-619|
|source: ||Materials Research Society symposium proceedings|
|appears in collections||FIS - Comunicações|
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