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 2.2 eV luminescence in GaN
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/15993

title: 2.2 eV luminescence in GaN
authors: Hofmann, D. M.
Kovalev, D.
Steude, G.
Volm, D.
Meyer, B. K.
Xavier, C.
Monteiro, T.
Pereira, E.
Mokov, E. N.
Amano, H.
Akasaki, I.
keywords: Crystal defects
Epitaxial growth
Luminescence
Magnetic resonance
Mathematical models
Metallorganic vapor phase epitaxy
Sapphire
Photoluminescence
Silicon carbide
Spectroscopy
Substrates
issue date: 1996
publisher: Materials Research Society
abstract: The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.
URI: http://hdl.handle.net/10773/15993
ISSN: 0272-9172
publisher version/DOI: http://dx.doi.org/10.1557/PROC-395-619
source: Materials Research Society symposium proceedings
appears in collectionsFIS - Comunicações

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