Please use this identifier to cite or link to this item:
http://hdl.handle.net/10773/15993| Title: | 2.2 eV luminescence in GaN |
| Author: | Hofmann, D. M. Kovalev, D. Steude, G. Volm, D. Meyer, B. K. Xavier, C. Monteiro, T. Pereira, E. Mokov, E. N. Amano, H. Akasaki, I. |
| Keywords: | Crystal defects Epitaxial growth Luminescence Magnetic resonance Mathematical models Metallorganic vapor phase epitaxy Sapphire Photoluminescence Silicon carbide Spectroscopy Substrates |
| Issue Date: | 1996 |
| Publisher: | Materials Research Society |
| Abstract: | The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors. |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/15993 |
| DOI: | 10.1557/PROC-395-619 |
| ISSN: | 0272-9172 |
| Appears in Collections: | DFis - Comunicações |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 2.2 eV Luminescence in GaN.pdf | 605.44 kB | Adobe PDF |  |
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